Computer simulation of fluctuation transformations in semiconductor barriers

  • A. G. Golovko Research and Production Firm «Artur», Kherson, Ukraine
Keywords: fluctuations, fluctuation transformations, semiconductor barriers, computer simulation

Abstract

The validity of the previously established regularity of fluctuation transformations in electronic devices with nonlinear voltage-current characteristics has been confirmed using computer modeling of the current dependence of the transformation of fluctuations in the concentration of mobile charge carriers and the saturation current into fluctuations in the voltage drop across p-n junctions.

 

Published
2004-08-30
How to Cite
Golovko, A. G. (2004). Computer simulation of fluctuation transformations in semiconductor barriers. Technology and Design in Electronic Equipment, (4), 15-17. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.4.15
Issue
No. 4 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Golovko A.G.

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