Sensor for monitoring processes of formation and strength development in binding media

Abstract

Studies were carried out on the strain and pressure sensitivity of layered low-dimensional А³В⁶-type single crystals. The baric sensitivity coefficient for indium selenide (InSe) single crystals is 10⁻⁸−10⁻⁷ Pa⁻¹, and the strain sensitivity is 10³−10⁴. The possibility of using such sensors for non-destructive monitoring of setting, strength development, and solvent crystallization processes in binding media is demonstrated, including for monitoring the condition of products cast in various compounds.