Changes in low-frequency noise in p-n junctions at low temperatures

  • A. G. Golovko Research and Production Firm «Artur», Kherson, Ukraine
Keywords: low-frequency noise, p-n junctions, low temperatures

Abstract

The results of experimental studies of a gallium arsenide diode in the temperature range of 78–300 K are presented. It is proposed that, when designing equipment, the operational stability of semiconductor sensors in the low-temperature range be preliminarily assessed based on an analysis of generation-recombination processes and Frenkel ionization of impurities.

How to Cite
Golovko, A. G. (1). Changes in low-frequency noise in p-n junctions at low temperatures. Technology and Design in Electronic Equipment, (2), 10-13. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.2.10
Issue
No. 2 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Golovko A. G.

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