Current amplification in injection photodiodes with field electrode

  • I. M. Vikulin Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • Sh. D. Kurmashev I. I. Mechnikov Odesa National University, Ukraine
  • R. G. Sidorets I. I. Mechnikov Odesa National University, Ukraine
  • Yu. G. Tumanov I. I. Mechnikov Odesa National University, Ukraine
Keywords: injection photodiodes, field mos electrode, photocurrent amplification, p-n junction, sensitivity enhancement, semiconductor devices

Abstract

The physical mechanism of internal photocurrent amplification in a p-n junction with a long base, on the lateral surface of which a field MOS electrode is created, is presented. The combined action of several amplification mechanisms increases the sensitivity of the injection photodiode.

Published
2003-08-31
How to Cite
Vikulin, I. M., Kurmashev, S. D., Sidorets, R. G., & Tumanov, Y. G. (2003). Current amplification in injection photodiodes with field electrode. Technology and Design in Electronic Equipment, (4), 46-49. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.4.46
Issue
No. 4 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Vikulin I. M., Kurmashev Sh. D., Sidorets R. G., Yu. G. Tumanov

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