Kovalyuk ZD, Katerynchuk VM, Kudrynskyi ZR, Kushnir BV, Netyaga VV, Khomyak VV. Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction. TKEA [Internet]. 2015Dec.25 [cited 2025Sep.16];(5–6):50-4. Available from: http://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.50