KOVALYUK, Z. D.; KATERYNCHUK, V. M.; KUDRYNSKYI, Z. R.; KUSHNIR, B. V.; NETYAGA, V. V.; KHOMYAK, V. V. Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction. Technology and design in electronic equipment, n. 5–6, p. 50-54, 25 Dec. 2015.