Vakiv, N. M., Krukovsky, S. I., Tymchyshyn, V. R., & Vas’kiv, A. P. (2013). Obtaining of bilateral high voltage epitaxial p–i–n Si structures by LPE method. Technology and Design in Electronic Equipment, (6), 41-45. https://doi.org/10.15222/TKEA2013.6.41