Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates

O. V. Semenov; A. V. Lopin; V. N. Boriskin

doi:10.15222/TKEA2017.3.40

O. V. Semenov Institute for Single Crystals of NASU; NTU «Kharkiv Polytechnic Institute», Kharkiv, Ukraine
A. V. Lopin Institute for Single Crystals of NASU, Kharkiv, Ukraine
V. N. Boriskin National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Kharkiv, Ukraine

DOI: https://doi.org/10.15222/TKEA2017.3.40

Keywords: nanocrystalline SiC films, Al2O3 single crystals, absorption spectra, electron irradiation, radiation defects, radiation ordering, annealing of defects

Abstract

It was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5·10¹⁴ to 2·10²⁰ cm^–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found that radiation-induced changes in the optical properties of nc SiC films are primarily manifested in the UV region of the spectrum associated with interband transitions, as well as in the region of the spectrum due to the absorption of intrinsic defects and disordered regions. It was established in the beginning of the annealing of defects in irradiated films has been observed at 200°C, which indicates the high concentration of carbon vacancies with the lowest activation energy. Significant changes in the optical properties of sapphire begin at fluence 5·10¹⁷ cm^–2, which should be considered when using these materials under conditions of intense radiation impact.

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