Deposition of borophosphosilicate glass films using the TEOS – dimethylphosphite – trimethylborate system

A. S. Turtsevich; O. Yu. Nalivaiko

doi:10.15222/TKEA2015.1.49

A. S. Turtsevich JSC INTEGRAL, Management Company of INTEGRAL Holding, Minsk, Belarus
O. Yu. Nalivaiko JSC INTEGRAL, Management Company of INTEGRAL Holding, Minsk, Belarus

DOI: https://doi.org/10.15222/TKEA2015.1.49

Keywords: borophosphatesilicate glass, deposition, topological relief planarity

Abstract

Modernization of horizontal low pressure deposition system has been performed. The liquid source delivery system using the bubblers has been developed. The PSG and BPSG film deposition processes and film properties using TEOS – Dimethylphosphite – TEB system have been studied. It is shown that the use of dimethylphosphite allows varying the phosphorus concentration in the wide range. It is found that the optimal range of the total boron and phosphorus concentration ensuring the acceptable topology planarity and resistance to defect formation during storage is 8.7 – 0.3 wt% when the phosphorus concentration is 3.0 – 3.8 wt%. It is found that at use of the TEOS – DMP – TEB system the depletion of the phosphorus concentration along the reaction zone does not occur, and the total dopant concentration is practically constant. At the same time, the deposition rate of BPSG films is 9.0 – 10.0 nm/min and the good film thickness uniformity is ensured. The as-deposited films have “mirror-like surface” that is proof of minimal surface roughness. The BPSG films with optimal composition are characterized by the reduced reaction capability against atmospheric moisture.

References

Labunov V. A., Nemtsev V.S., Danilovich I.I. Topography planarization in LSI manufacture. Zarubezh. Elektron. Tekh., 1987, no. 8, pp. 3–23. (Rus)

Skidmore K. Techniques for planarizing device topography. Semicond. Int., 1988, no. 4, pp. 115–119.

Saxena A.N., Pramanik D. Planarization techniques for multilevel metallization. Solid State Technol., 1986, vol. 29, no. 10, pp. 95–100.

Dukhanova T.G., Vasilev V.Y., Veretenin V.I. Deposition, properties, and applications of borophosphosilicate glass films in ICs. Obz. Elektron. Tekh., Ser. 3, 1988, iss. 4 (1370), pp. 2–72. (Rus)

Jagadeesha T., Kim L., Gonsalvis J., Gowda T. Innovative low pressure borophosphosilicate glass process for nano devices. Indian J. of Engineering and Material Science, 2009, vol. 16, pp. 341-346.

Repinskii S.M. Chemical kinetics of dielectric film growth. In book “Current issues in the physical chemistry of semiconductor surfaces”. Novosibirsk, Nauka, 1988, pp. 90–152. (Rus)

Semenov I.I. Chain Reactions, Moscow: Nauka, 1986, pp. 163–192.

Vasilev V.Y., Sukhov M.S. Equipment and techniques for low-pressure chemical vapor deposition. Part 1. Obz. Elektron. Tekh., Ser. 7, 1985, iss. 4, p. 52. (Rus)

Turtsevich A.S., Gran’ko V.I., Shilo O.A., Tikhonov V.I. Environmental issues in chemical vapor deposition. Elektron. Prom-st., 1993, no. 10, pp. 87–95.

Turtsevich A.S., Zaitsev D.A., Kabakov M.M. et al. Planarity of borophosphosilicate-glass films as dependent on the deposition conditions, Elektron. Tekh., Ser. 3, 1992, iss. 1 (146), pp. 24–27.

Jagadeesha T., Kim L., Lee W.T., Gowda T. Development of new BPSG process to reduce boron concentration range in BPSG SAVD process. Int. J. of Engineering Science and Technology, 2011, vol. 3, no. 1, pp. 156-161.

Dimethylphosphite: TU 2634-002-40475629-99 Specification.

Turtsevich A.S., Zakharik S.V., Makarevich I.I. et al. Deposition of borophosphosilicate-glass films from the TEOS–TMPate–TMB–O2 reactant system. Elektron. Prom-st., 1995, no. 3, pp. 19-22. (Rus)

Becker F.S., Pawlik D., Schäfer M., Staudigl G. Process and film characterization of low pressure tetraethylorthosilicateborophosphosilicate glass. J. Vac. Sci. Technol., B, 1986, vol. 4, no. 3, pp. 732–744.

Williams D.S., Dein E.A., LPCVD of borophosphosilicate glass from organic reactants. J. Electrochem. Soc.,

, vol. 134, no. 3, pp. 657–664.

Turtsevich A.S., Rumak N.V., Misyuchenko V.M., et al. [Influence of dopant concentrations on defect formation in borophosphosilicate-glass films] Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Nauk, 1993, no. 4, pp. 70-73. (Rus)

Levy R.A., Vincent S.M., McGahan T.E. Evaluation of the phosphorus concentration and its effect on viscous flow and reflow in phosphosilicate glass. J. Electrochem. Soc., 1985, vol. 132, no. 6, pp. 1472-1480.

Turtsevich A.S., Anufriev L.P., Nalivaiko O.Yu. [Silicon nitride film deposition by dichlorosilane ammonolysis in a Karat LPCVD reactor]. Izv. Belarus. Inzh. Akad., 2004, no. 2 (18), pp. 104–106. (Rus)

Vasilev V.Y., Dukhanova T.G. [Borophosphosilicate glass composition optimized for IC manufacture]. Elektron. Prom-st., 1989, no. 3, p. 31. (Rus)

Kim H.-J., Choi P., Kim K., Choi B. A study on the fluorine effect of direct contact process in high-doped boron phosphorus silicate glass (BPSG). J. of Semiconductor Technology and Science, 2013, vol. 13, no. 6, pp. 662-667.

Rumak N.V., Khat’ko V.V. Dielectric films in solid-state microelectronics. Minsk: Nauka i Tekhnika, 1990, pp. 140–141. (Rus)

Rumak N.V., Turtsevich A.S., Shilo O.A., Tikhonov V.I. Planarity of borophosphosilicate glass films as dependent on the deposition temperature. Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Navuk, 1993, no. 2, pp. 54–56. (Rus)

Levy L.A., Gallagher P.K., Scherey E. A new LPCVD technique of producing borophosphosilicate glass films by injection of miscible liquid precursors. J. Electrochemical Society. 1987, vol. 134, no 2. pp. 430-436.

Vasilev V.Y., Borophosphosilicate glass films as interlayer isolation of IC. Elektron. Prom-st., 1986, no. 1, p. 23-26. (Rus)

Vasilev V.Y. Borophosphosilicate glass films in silicon microelectronics. Part 1: Chemical vapor deposition, composition, and properties. Russ. Microelectron, 2004, vol. 33, no. 5, pp. 271-284 (Rus)

Turtsevich A.S., Nalivaiko O.Yu., Zaitsev D.A. et al. Simulation of deposition of borophosphosilicate glass obtained by hydride oxidation at atmospheric pressure. Russ. Microelectron, 1996, vol. 25, no. 6, pp. 398–403. (Rus)

Nalivaiko O.Yu., Pshenichny E.N., Plebanovich V.I. et al. The comparison of BPSG deposition processes in horizontal low pressure CVD reactor and in plasma enhanced CVD reactors. V Int. scient. and techn. conf. “Electronics and informatics 2005”, Moscow—Zelenograd, 2005, vol.1, pp. 143-144. (Rus)

Thorsness A.G., Muscat A.J. Moisture absorption and reaction in BPSG thin films. J. Electrochem. Soc., 2003, vol. 150, no. 12, pp. F219–F228.

Vasilev V.Y. Borophosphosilicate glass films in silicon microelectronics. Part 2: Structure and applications. Russ. Microelectron, 2005, vol. 34, no. 2, pp. 67-77. (Rus)

Belarus Patent 2823 [Method for planarization of silicon structures]. Published Sept. 30, 1999. (Rus)

Belarus Patent 2531[Method of deposition of phosphosilicate glass]. Published Dec. 30, 1998. (Rus)

Belarus Patent 3924 [Method of deposition of phosphosilicate glass]. Published June 30, 2001. (Rus)

Belarus Patent 1613 [Method for producing borophosphosilicate glass films]. Published Mar. 30, 1997. (Rus)

Belarus Patent 4154 [Method for producing borophosphosilicate glass films]. Published Dec. 30, 2001. (Rus)