Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor

  • Z. R. Kudrynskyi I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • Z. D. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: layered crystals, heterojunctions, annealing, spectral characteristics, current-voltage characteristics

Abstract

The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.

Published
2012-12-27
How to Cite
Kudrynskyi, Z. R., & Kovalyuk, Z. D. (2012). Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor. Technology and Design in Electronic Equipment, (6), 40-43. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA.2012.6.40
Issue
No. 6 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Kudrynskyi Z. R., Kovalyuk Z. D.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.