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"TKEA" ¹ 6'2011
- Electronic facilities: investigations, development
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Merging polygons on two-layer printed circuit board.
Murov S. Yu. (3)
- Systems of signals trnsfer and processing
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Optoelectronic correlation processors with photorefractive crystals for the storage elements.
Lipinskii A. Y., Rudiakova A. N., Danilov V. V. (5)
- Sensoelectronic
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Mathematical model of process of redundant measurements with uninterrupted influence of measurand on sensing element of sensor.
Redko V. V. (10)
- Functional micro- and nanoelectronics
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The diamond RF-transistor model.
Altukhov A. A., Zyabluk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V. (12)
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Hybrid integrated circuits for sound signal processing.
Koval’chuk V. A., Sevast’yanov V. V. (20)
- Technological processes and equipment
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Increase of noise immunity of photomask images binarization in the space of the wavelet transform.
Shcherbakova G. Yu., Dilevsky A. A., Krylov V. N., Logvinov O. V., Plachinda
O. E.
(23)
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Formation of polished surface of Bi and Sb chalcogenides in pickling compositions K2Cr2O7–HBr.
Pavlovich I. I., Tomashik Z. F., Tomashik V. N., Stratiichuk I. B. (27)
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Method of determination of temperature and heat resistance of the points on the integrated circuit crystal surface.
Popov V. M., Klimenko A. S., Pokanevich A. P., Samotovka V. L.
(30)
- Materials of electronics
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Peculiarities of fullerenes condensation from molecular beam in vacuum.
Neluba P. L. (35)
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Research of the process of thermal depolarization of ferroelectric ceramics (Pb, Sr)(Zr, Ti) O3.
Kuzenko D. V., Bazhin A. I., Stupak V. A., Kisel M. G. Dorofeeva V. V. Starshinov I. M., Pokintelitsa A. E. (40)
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Research of the tolerable pulsed power of silicon p+–p–n+-structure.
Karimov A. V., Yodgorova D. M., Abdulhaev O. A., Karimov A. A., Asanova G. O. (43)
- Metrology. Standartization
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The measuring converter indifferent to chaotic excitation of a sensitive element.
Korotkii V. P., Il’in V. N. (46)
- Microwave technology
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Focusing of intensive electron beams in helix TWT with PPM focusing system with nonsinusoidal field.
Chasnyk V. I. (49)
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Promising telecommunicational equipment.
(53)
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