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"TKEA" ¹ 5'2011
- Electronic facilities: investigations, development
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Application of the technology of thin films and nanostructured materials in the manufacture of thermally loaded printed circuit boards.
Sakhno E. A., Balashov M. A. Zhilikov V. V., Lobasov D. V. (3)
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Thermal vacuum testing of the power supply system of the nanosatellite NTUU "KPI".
Rassamakin B. M., Khairnasov S. M., Khominich V. I., Budionnyi A. V., Kovalenko E. Yu., Eliseyev Ye. N. (6)
- Sensoelectronic
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Low-dimensional silicon crystals for photovoltaic cells.
Druzhinin A. A., Ostrovskii I. P., Khoverko Yu. N., Nichkalo S. I., Berezhanskii Ye. I. (11)
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Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals.
Altukhov A. A., Afanas’ev M. S., Zyabliuk K. N., Mityagin A. Yu., Talipov N. H., Chucheva
G. V. (14)
- Functional micro- and nanoelectronics
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Integrated double-sided silicon microstrip detectors.
Perevertailo V. L. (17)
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Technique and installation for determination of semiconductors heat conduction with the use of radiant energy.
Gurbanniyazov M. A., Kurbanov M. A.
(25)
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Fine structure of laser spectrum at electron-beam pumping based on radiation-modified optically homogeneous crystals of undoped GaAs.
Garkavenko A. S. (27)
- Materials of electronics
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Interlayer surface impurity nanocomposites of (0001) crystal Bi2Te3, alloyed with zinc and selenium.
Alieva A. P., Aleskerov F. K., Kahramanov S. Sh.
(31)
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Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix.
Andronova E. V., Baganov Ye. A., Kurak V. V. (35)
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Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact.
Smyntyna V. A., Kulinich O. A., Yatsunskii I. R., Sviridova O. V., Marchuk I. A. (39)
- Microwave technology
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Autodyne characteristics of stabilized UHF-oscillators at a strong reflected signal.
Noskov V. Ya., Ignatkov K. A., Smolskii S. M. (42)
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