Development of a construction and manufacturing techniques of complementary transistors for the radiation tolerant integrated circuits
Gorban A. N., Kravchina V. V.
Keywords: complementary transistors, dielectric insulation, manufacturing processes, radiation-resistant ICs.
The construction of vertical complementary transistors with the full dielectric isolation is developed, new technolo-gical processes of creation on their basis the radiation tolerant integrated circuits with parameters which provide low values of a leakage current along with the considerable values of a forward current and breakdown voltage at the information signals exchange frequency of about 500 kHz are developed.
Ukraine, Zaporozhye classic private university, Zaporozhye State Engineering Academy.