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Development of a construction and manufacturing techniques of complementary transistors for the radiation tolerant integrated circuits

Gorban A. N., Kravchina V. V.

Keywords: complementary transistors, dielectric insulation, manufacturing processes, radiation-resistant ICs.

The construction of vertical complementary transistors with the full dielectric isolation is developed, new technolo-gical processes of creation on their basis the radiation tolerant integrated circuits with parameters which provide low values of a leakage current along with the considerable values of a forward current and breakdown voltage at the information signals exchange frequency of about 500 kHz are developed.

Ukraine, Zaporozhye classic private university, Zaporozhye State Engineering Academy.